Thursday 27 July 2023

Micron Technology Aims to Expand its Share in the HBM Market

**Micron Technology Unveils Advanced 8-High 24GB HBM3 Gen2 Memory**

Micron Technology, one of the leading memory chip manufacturers, has recently announced the sampling of its latest innovation – the industry’s first 8-high 24GB HBM3 Gen2 memory. This new memory solution offers a remarkable 50% improvement over previous HBM3 solutions. The advancements in Micron’s HBM3 Gen2 memory will significantly reduce training times for large language models like GPT-4 and enhance the overall efficiency of AI infrastructure.

The rapid growth of generative AI servers, spurred by OpenAI’s ChatGPT, has resulted in an increased demand for high bandwidth memory (HBM). Micron Technology aims to catch up to its competitors in this segment by introducing its most advanced memory solution to date. This cutting-edge 8-high 24GB HBM3 Gen2 memory is expected to accelerate the development of generative AI.

**The Rise of AI and the Need for High Bandwidth Memory**

Artificial intelligence has experienced remarkable advancements in recent years. The combination of computing power and improved AI methods has led to significant disruptions in various industries. As AI applications become more complex and demanding, faster and more efficient access to data is essential.

HBM memory plays a crucial role in enhancing performance and reducing power consumption in AI systems. Generative AI, in particular, requires higher HBM capabilities. Market experts predict that the demand for HBM will continue to grow rapidly due to the rise of generative AI.

Micron Technology currently holds a small share of the HBM market compared to its larger competitors. To bridge the gap, Micron has developed its newest version of HBM specifically for AI accelerators and high-performance computing. This latest iteration, the 8-high 24GB HBM3 Gen2 memory, boasts a bandwidth greater than 1.2TB/s and a pin speed over 9.2Gb/s, offering a significant improvement over previous HBM3 solutions.

**Unleashing AI Performance with Micron’s HBM3 Gen2**

One of the key benefits of Micron’s HBM3 Gen2 memory is its ability to reduce training times for large language models like GPT-4. By delivering efficient infrastructure utilization for AI inference, Micron enables superior performance while maintaining power efficiency. The HBM3 Gen2 memory also offers an improved total cost of ownership (TCO), making it an attractive option for AI data centers.

While HBM memory has traditionally been considered a niche market, the advent of generative AI has led to a surge in demand. Trendforce research predicts a 60% increase in HBM demand this year alone, with further growth expected in 2024. Micron’s HBM3 Gen2 memory is designed to meet the power demands of modern AI data centers, with improvements in performance-to-power ratios and pin speed.

Micron has achieved enhanced power efficiency in its HBM3 Gen2 memory through various advancements, including doubling the through-silicon vias (TSVs) compared to competitive offerings. The company has also implemented thermal impedance reduction and an energy-efficient data path design. These innovations enable Micron’s HBM3 Gen2 memory to address the increasing demands of generative AI models.

**Lower Costs and Increased Efficiency with Micron’s HBM3 Gen2**

Micron’s HBM3 Gen2 memory is specifically tailored to meet the demands of generative AI, offering significant capacity and pin speed improvements. With 24GB of capacity per cube and a pin speed exceeding 9.2Gb/s, training times for large language models are reduced by over 30%. This reduction in training time translates to lower total cost of ownership, making it an economically advantageous solution for AI data centers.

The improved performance per watt of Micron’s HBM3 Gen2 memory also results in notable cost savings. For every five watts of power savings per HBM cube, an installation of 10 million GPUs can save up to $550 million in operational expenses over five years. This cost-effectiveness, coupled with the best-in-class performance per watt, positions Micron’s HBM3 Gen2 memory as an ideal choice for modern AI data centers.

**Micron’s Future Roadmap for HBM3 Gen2**

Micron Technology is committed to pushing the boundaries of HBM technology even further. In addition to the 8-high 24GB HBM3 Gen2 memory, Micron plans to release a 12-high stack with 36GB capacity in the first quarter of 2024. This upgraded version will provide 50% more capacity for a given stack height, reinforcing Micron’s position as a leader in the HBM market.

The development of the HBM3 Gen2 memory has been a collaborative effort between Micron and TSMC (Taiwan Semiconductor Manufacturing Company). TSMC is currently evaluating Micron’s HBM3 Gen2 memory following the receipt of samples. Micron’s global engineering organization, with contributions from the United States, Japan, and Taiwan, has played a pivotal role in bringing this breakthrough product to market.

**Editor Notes: Breaking Barriers in Memory Technology**

Micron Technology’s unveiling of the 8-high 24GB HBM3 Gen2 memory showcases the company’s commitment to advancing memory technology for AI applications. This groundbreaking innovation will undoubtedly drive the development of generative AI and accelerate the pace of AI advancements globally.

As the demand for high bandwidth memory continues to grow, Micron’s HBM3 Gen2 memory positions the company as a key player in the market. The improved performance, power efficiency, and cost-effectiveness of their memory solution make it highly attractive to AI data centers.

Micron’s collaboration with TSMC further strengthens their position in the memory industry, ensuring the development and availability of cutting-edge technologies. With their strong roadmap and dedication to innovation, Micron Technology is well-positioned to meet the evolving needs of the AI market.

For more news and updates on breakthrough technologies and advancements, visit the GPT News Room at [GPT News Room](https://gptnewsroom.com).

*Disclaimer: The information provided in this article is based on available sources and does not constitute financial or investment advice. The author does not hold any positions in the mentioned stocks or companies.*

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